AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
MRF6P3300HR3 MRF6P3300HR5
11
RF Device Data
Freescale Semiconductor
Table 6. 470-860 MHz Broadband Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Short
2743019447
Fair-Rite
C1, C2, C20, C21
43 pF Chip Capacitors
ATC700B430FT500XT
ATC
C3, C4, C14, C15
100 μF, 50 V Electrolytic Capacitors
515D107M050BB6AE3
Vishay
C5, C6, C16, C17
220 nF, 100 V Chip Capacitors
C1812C224K5RAC
Kemet
C7, C8, C18, C19
0.01 μF, 100 V Chip Capacitors
C1210C103J1RAC
Kemet
C9, C13
0.8-8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C10
15 pF 600B Chip Capacitor
ATC600S150FT250XT
ATC
C11
16 pF 600B Chip Capacitor
ATC600B160FT250XT
ATC
C12
4.3 pF 600B Chip Capacitor
ATC600B4R3BT250XT
ATC
C22, C23
470 μF, 63 V Electrolytic Capacitors
EMVY630GTR471MLN0S
Nippon
C24, C25, C26, C27
0.1 μF, 50 V Chip Capacitors
CDR33BX104AKYS
Kemet
C28, C29
10 μF, 50 V Electrolytic Capacitors
ECE-V1HA100SP
Nippon Chemi-Con
Coax1, 2, 7, 8
50 Ω, Semi Rigid Coax, 3.00″
Long
UT-141C-50-SP
Micro-Coax
Coax3, 4, 5, 6
25 Ω, Semi Rigid Coax, 3.00″
Long
UT-141C-25
Micro-Coax
R1
1 kΩ, 1/8 W Resistor
CRCW12061001FKEA
Vishay
R2, R3
10 Ω, 1/8 W Resistors
CRCW120610R0FKEA
Vishay
Figure 20. 470-860 MHz Broadband Test Circuit Component Layout
R1
MRF6P93300
C28
C26
COAX1
R2
Rev. 3
C3
C5
C7
C9
C10
C1
C2
C4
C8
C6
C27
C29
COAX2
R3
B2
VGG
VGG
VDD
C22
COAX5
C24
C14
C19
C18C18
C12
C11
C13
C20
C21
C15
VDD
C25
C23
CUT OUT AREA
COAX3
COAX4
B1
COAX7
COAX8
COAX6
C16
C17
相关PDF资料
MRF6P9220HR5 MOSFET RF N-CH 28V 47W NI-860C3
MRF6S18060NBR1 MOSFET RF N-CH 26V 60W TO272-4
MRF6S18100NR1 MOSFET RF N-CH 28V 100W TO2704
MRF6S18140HSR5 MOSFET RF N-CH 28V ESD NI880S
MRF6S19060GNR1 MOSFET RF N-CH 28V TO-270-2 GW
MRF6S19100GNR1 MOSFET RF N-CH 28V TO-270-2 GW
MRF6S19100HSR5 MOSFET RF N-CHAN 28V 22W NI-780S
MRF6S19120HSR5 MOSFET RF N-CHAN 28V 19W NI-780S
相关代理商/技术参数
MRF6P9220HR3 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6P9220HR3_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR3_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P9220HR5 功能描述:MOSFET RF N-CH 28V 47W NI-860C3 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF6S18060MBR1 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S18060NBR1 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18060NR1 功能描述:射频MOSFET电源晶体管 1880MHZ 60W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S18060NR1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs